Samsung Unveils 3D Memory for AI Data Centers

Samsung introduced its zHBM concept at the Future of Memory and Storage 2026 conference in Santa Clara. The architecture vertically stacks high-bandwidth memory directly above AI accelerators rather than alongside them. This design aims to reduce data travel distance, potentially delivering eight times the performance of HBM5.

The company also showcased zNAND-O for edge AI and V10 BV-NAND, which stacks over 400 layers of memory cells. Samsung reported these technologies offer threefold improvements in energy efficiency.